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Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC  - ScienceDirect
Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC - ScienceDirect

Awards | CCNNI
Awards | CCNNI

Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC - ScienceDirect
Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC - ScienceDirect

Modified sheet resistance and specific contact resistance of Ni-, Pt- and  Ti-based contacts to n-type 3C-SiC | SpringerLink
Modified sheet resistance and specific contact resistance of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC | SpringerLink

Contact Centre Network NI (CCNNI) (@CCNNIre) / X
Contact Centre Network NI (CCNNI) (@CCNNIre) / X

Register Products to MyNI User Account - NI
Register Products to MyNI User Account - NI

Selective Laser Annealing for Ohmic Contact Formation (OCF) - Laser  Micromachining - 3D-Micromac AG
Selective Laser Annealing for Ohmic Contact Formation (OCF) - Laser Micromachining - 3D-Micromac AG

PDF] Characterization of Pd/Ni/Au ohmic contacts on p-GaN | Semantic Scholar
PDF] Characterization of Pd/Ni/Au ohmic contacts on p-GaN | Semantic Scholar

Improved reduction of contact resistance in NiSi/Si junction using Holmium  interlayer - ScienceDirect
Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer - ScienceDirect

Stephen Lomas appointed as Chair of CCNNI | ANI
Stephen Lomas appointed as Chair of CCNNI | ANI

PDF] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts  to p-type GaN | Semantic Scholar
PDF] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN | Semantic Scholar

Register Products to MyNI User Account - NI
Register Products to MyNI User Account - NI

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au  Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors | ACS Applied  Materials & Interfaces
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors | ACS Applied Materials & Interfaces

Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for  Bi2Te3-Based Thermoelectric Devices | ACS Applied Materials & Interfaces
Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for Bi2Te3-Based Thermoelectric Devices | ACS Applied Materials & Interfaces

Electrical properties of graphene-metal contacts | Scientific Reports
Electrical properties of graphene-metal contacts | Scientific Reports

Contact Marketing (NI) Ltd | LinkedIn
Contact Marketing (NI) Ltd | LinkedIn

Stars of the NI Contact Centre Industry Celebrate Success!
Stars of the NI Contact Centre Industry Celebrate Success!

What is meant by close contact? - Guidance - COVID-19 (Coronavirus) Northern  Ireland
What is meant by close contact? - Guidance - COVID-19 (Coronavirus) Northern Ireland

Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN  heterostructure by Al2O3 particles | Semantic Scholar
Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles | Semantic Scholar

Contact angle images for a 5 μL air bubble (A−D) and a 5 μL water... |  Download Scientific Diagram
Contact angle images for a 5 μL air bubble (A−D) and a 5 μL water... | Download Scientific Diagram

Modified sheet resistance and specific contact resistance of Ni-, Pt- and  Ti-based contacts to n-type 3C-SiC | SpringerLink
Modified sheet resistance and specific contact resistance of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC | SpringerLink

Contact | Alpha Housing NI
Contact | Alpha Housing NI

Solved b) A cell is set up such that a Ni wire is placed in | Chegg.com
Solved b) A cell is set up such that a Ni wire is placed in | Chegg.com

Micromachines | Free Full-Text | Comprehensive Schottky Barrier Height  Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on  AlGaN/GaN High-Electron-Mobility Transistors
Micromachines | Free Full-Text | Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors